• HEXFET®(x)
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Manufacturer

INFINEON TECHNOLOGIES(3)

Type of transistor

N-MOSFET (3)

Mounting

SMD(3)

Technology

HEXFET®(3)

Power dissipation (W)

2.5W(3)

Gate charge

21nC(1)

35nC(1)

41nC(1)

Gate-source voltage (V)

±12V(1)

±20V(2)

On-state resistance

12mΩ(1)

13.4mΩ(1)

44mΩ(1)

Drain-source voltage (V)

30V(1)

80V(1)

150V(1)

Drain current (A)

5.1A(1)

10A(1)

11A(1)

Turn-on time

7.8ns(1)

9.4ns(1)

9ns(1)

Rise Time

2.5ns(1)

8.5ns(1)

10ns(1)

Turn-off time

15ns(1)

19ns(1)

29ns(1)

Fall Time

4.0ns(1)

8.6ns(1)

14ns(1)

Kind of channel

Enhanced(3)

Case

SO8(3)

Kind of package

Bulk(3)

Price

-