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    IRF7494TRPBF | Transistor: N-MOSFET; unipolar; 150V; 5.1A; 2.5W; SO8
IRF7494TRPBF | Transistor: N-MOSFET; unipolar; 150V; 5.1A; 2.5W; SO8

IRF7494TRPBF

Reference: IRF7494TRPBF

4.31 zł
Tax included

Transistor: N-MOSFET; unipolar; 150V; 5.1A; 2.5W; SO8

Quantity

Specyfication

Manufacturer

INFINEON TECHNOLOGIES

Type of transistor

N-MOSFET

Technology

HEXFET®

Drain current (A)

5.1A

Drain-source voltage (V)

150V

On-state resistance  RDS(on)3

44mΩ

Gate-source voltage (V)

±20V

Power dissipation (W)

2.5W
Gate charge

35nC
Kind of channel

Enhanced
Polarisation

Unipolar

Mounting

SMD

Case

SO8
Kind of package

Bulk
IRF7494TRPBF

Data sheet

Drain current (A)
5.1A
Drain-source voltage (V)
150V
On-state resistance
44mΩ
Gate-source voltage (V)
±20V
Power dissipation (W)
2.5W
Case
SO8
Mounting
SMD
Manufacturer
INFINEON TECHNOLOGIES
Kind of package
Bulk
Type of transistor
N-MOSFET
Gate charge
35nC
Kind of channel
Enhanced
Technology
HEXFET®
Polarisation
Unipolar
Operating temperature
-55...+150°C
Turn-off time
29ns
Turn-on time
9ns
Fall Time
14ns
Rise Time
10ns

Download

IRF7494TRPBF

IRF7494TRPBF

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