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    IRF830PBF | Transistor: N-MOSFET; unipolar; 500V; 2.9A; 74W; TO220AB
IRF830PBF | Transistor: N-MOSFET; unipolar; 500V; 2.9A; 74W; TO220AB

IRF830PBF

Reference: IRF830PBF

3.32 zł
Tax included

Transistor: N-MOSFET; unipolar; 500V; 2.9A; 74W; TO220AB

Quantity

Specyfication

Manufacturer

VISHAY

Type of transistor

N-MOSFET

Drain current (A)

2.9A

Drain-source voltage (V)

500V

On-state resistance  RDS(on)3

1.5Ω

Gate-source voltage (V)

±20V

Power dissipation (W)

74W
Gate charge

38nC
Kind of channel

Enhanced
Polarisation

Unipolar

Mounting

THT

Case

TO220AB
Kind of package

Bulk
IRF830PBF

Data sheet

Drain current (A)
2.9A
Drain-source voltage (V)
500V
On-state resistance
1.5Ω
Gate-source voltage (V)
±20V
Power dissipation (W)
74W
Case
TO220AB
Mounting
THT
Manufacturer
VISHAY
Kind of package
Bulk
Type of transistor
N-MOSFET
Gate charge
38nC
Kind of channel
Enhanced
Polarisation
Unipolar
Operating temperature
-55...+150°C
Turn-off time
42ns
Turn-on time
8.2ns
Fall Time
16ns
Rise Time
16ns

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IRF830PBF

IRF830PBF

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