close

We would like to inform you that our web shop uses cookie technology and at the same time does not automatically collect any information with the exception of the information contained in these files (so-called "cookies").

×

Specyfication

Manufacturer

INFINEON TECHNOLOGIES

Type of transistor

N-MOSFET

Drain current (A)

170A

Drain-source voltage (V)

75V

On-state resistance  RDS(on)3

4.5mΩ

Gate-source voltage (V)

±20V

Power dissipation (W)

310W

Gate charge

180nC

Kind of channel

Enhanced

Polarisation

Unipolar

Mounting

THT

Case

TO247AC

Kind of package

Bulk

IRFP2907ZPBF

Data sheet

Drain current (A)
170A
Drain-source voltage (V)
75V
On-state resistance
4.5mΩ
Gate-source voltage (V)
±20V
Power dissipation (W)
310W
Case
TO247AC
Mounting
THT
Manufacturer
INFINEON TECHNOLOGIES
Kind of package
Bulk
Type of transistor
N-MOSFET
Gate charge
180nC
Kind of channel
Enhanced
Technology
HEXFET®
Polarisation
Unipolar
Operating temperature
-55...+175°C
Turn-off time
97ns
Turn-on time
19ns
Fall Time
100ns
Rise Time
140ns

Download

IRFP2907ZPBF

IRFP2907ZPBF

Download (289.9KB)

16 other products in the same category: