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    IRF1310NPBF | Transistor: N-MOSFET; unipolar; 100V; 42A; 160W; TO220AB
IRF1310NPBF | Transistor: N-MOSFET; unipolar; 100V; 42A; 160W; TO220AB

IRF1310NPBF

Reference: IRF1310NPBF

6.03 zł
Tax included

Transistor: N-MOSFET; unipolar; 100V; 42A; 160W; TO220AB

Quantity

Specyfication

Manufacturer

INFINEON TECHNOLOGIES

Type of transistor

N-MOSFET

Technology

HEXFET®

Drain current (A)

42A

Drain-source voltage (V)

100V

On-state resistance  RDS(on)3

36mΩ

Gate-source voltage (V)

±20V

Power dissipation (W)

160W
Gate charge

73.3nC
Kind of channel

Enhanced
Polarisation

Unipolar

Mounting

THT

Case

TO220AB
Kind of package

Bulk
IRF1310NPBF

Data sheet

Drain current (A)
42A
Drain-source voltage (V)
100V
On-state resistance
36mΩ
Gate-source voltage (V)
±20V
Power dissipation (W)
160W
Case
TO220AB
Mounting
THT
Manufacturer
INFINEON TECHNOLOGIES
Kind of package
Bulk
Type of transistor
N-MOSFET
Gate charge
73.3nC
Kind of channel
Enhanced
Technology
HEXFET®
Polarisation
Unipolar
Operating temperature
-55...+175°C
Turn-off time
45ns
Turn-on time
11ns
Fall Time
40ns
Rise Time
56ns

Download

IRF1310NPBF

IRF1310NPBF

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