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Specyfication

Manufacturer

INFINEON TECHNOLOGIES

Type of transistor

N-MOSFET

Drain current (A)

50A

Drain-source voltage (V)

200V

On-state resistance  RDS(on)3

40mΩ

Gate-source voltage (V)

±20V

Power dissipation (W)

300W

Gate charge

234nC

Kind of channel

Enhanced

Polarisation

Unipolar

Mounting

THT

Case

TO247AC

Kind of package

Bulk

IRFP260MPBF

Data sheet

Drain current (A)
30A
Drain-source voltage (V)
200V
On-state resistance
40mΩ
Gate-source voltage (V)
±20V
Power dissipation (W)
300W
Case
TO247AC
Mounting
THT
Manufacturer
INFINEON TECHNOLOGIES
Kind of package
Bulk
Type of transistor
N-MOSFET
Gate charge
234nC
Kind of channel
Enhanced
Technology
HEXFET®
Polarisation
Unipolar
Operating temperature
-55...+175°C
Turn-off time
55ns
Turn-on time
17ns
Fall Time
48ns
Rise Time
60ns

Download

IRFP260MPBF

IRFP260MPBF

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