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    IRF2807PBF | Transistor: N-MOSFET; unipolar; 75V; 82A; 200W; TO220AB
IRF2807PBF | Transistor: N-MOSFET; unipolar; 75V; 82A; 200W; TO220AB

IRF2807PBF

Reference: IRF2807PBF

5.17 zł
Tax included

Transistor: N-MOSFET; unipolar; 75V; 82A; 200W; TO220AB

Quantity

Specyfication

Manufacturer

INFINEON TECHNOLOGIES

Type of transistor

N-MOSFET

Technology

HEXFET®

Drain current (A)

82A

Drain-source voltage (V)

75V

On-state resistance  RDS(on)3

13mΩ

Gate-source voltage (V)

±20V

Power dissipation (W)

200W
Gate charge

106.7nC
Kind of channel

Enhanced
Polarisation

Unipolar

Mounting

THT

Case

TO220AB
Kind of package

Bulk
IRF2807PBF

Data sheet

Drain current (A)
82A
Drain-source voltage (V)
75V
On-state resistance
13mΩ
Gate-source voltage (V)
±20V
Power dissipation (W)
200W
Case
TO220AB
Mounting
THT
Manufacturer
INFINEON TECHNOLOGIES
Kind of package
Bulk
Type of transistor
N-MOSFET
Gate charge
106.7nC
Kind of channel
Enhanced
Technology
HEXFET®
Polarisation
Unipolar
Operating temperature
-55...+175°C
Turn-off time
49ns
Turn-on time
13ns
Fall Time
50ns
Rise Time
64ns

Download

IRF2807PBF

IRF2807PBF

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