close

We would like to inform you that our web shop uses cookie technology and at the same time does not automatically collect any information with the exception of the information contained in these files (so-called "cookies").
Reset Done
×
    IRF1010EPBF | Transistor: N-MOSFET; unipolar; 60V; 81A; 170W; TO220AB
IRF1010EPBF | Transistor: N-MOSFET; unipolar; 60V; 81A; 170W; TO220AB

IRF1010EPBF

Reference: IRF1010EPBF

4.31 zł
Tax included

Transistor: N-MOSFET; unipolar; 60V; 81A; 170W; TO220AB

Quantity

Specyfication

Manufacturer

INFINEON TECHNOLOGIES

Type of transistor

N-MOSFET

Technology

HEXFET®

Drain current (A)

81A

Drain-source voltage (V)

60V

On-state resistance  RDS(on)3

12mΩ

Gate-source voltage (V)

±20V

Power dissipation (W)

170W
Gate charge

86.6nC
Kind of channel

Enhanced
Polarisation

Unipolar

Mounting

THT

Case

TO220AB
Kind of package

Bulk
IRF1010EPBF

Data sheet

Drain current (A)
81A
Drain-source voltage (V)
60V
On-state resistance
12mΩ
Gate-source voltage (V)
±20V
Power dissipation (W)
170W
Case
TO220AB
Mounting
THT
Manufacturer
INFINEON TECHNOLOGIES
Kind of package
Bulk
Type of transistor
N-MOSFET
Gate charge
86.6nC
Kind of channel
Enhanced
Technology
HEXFET®
Polarisation
Unipolar
Operating temperature
-55...+175°C
Turn-off time
48ns
Turn-on time
12ns
Fall Time
53ns
Rise Time
78ns

Download

IRF1010EPBF

IRF1010EPBF

Download (199.6KB)

16 other products in the same category:

IRF640PBF | Transistor: N-MOSFET; unipolar; 200V; 11A; 125W; TO220AB
VISHAY

IRF640PBF

Price 3.01 zł
Availability: 10 In Stock

Transistor: N-MOSFET; unipolar; 200V; 11A; 125W; TO220AB

IRFP254PBF | Transistor: N-MOSFET; unipolar; 250V; 23A; 190W; TO247AC
VISHAY

IRFP254PBF

Price 8.86 zł
Availability: 10 In Stock

Transistor: N-MOSFET; unipolar; 250V; 23A; Idm: 92A; 190W; TO247AC