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    IRF3710PBF | Transistor: N-MOSFET; unipolar; 100V; 57A; 200W; TO220AB
IRF3710PBF | Transistor: N-MOSFET; unipolar; 100V; 57A; 200W; TO220AB

IRF3710PBF

Reference: IRF3710PBF

4.92 zł
Tax included

Transistor: N-MOSFET; unipolar; 100V; 57A; 200W; TO220AB

Quantity

Specyfication

Manufacturer

INFINEON TECHNOLOGIES

Type of transistor

N-MOSFET

Technology

HEXFET®

Drain current (A)

57A

Drain-source voltage (V)

100V

On-state resistance  RDS(on)3

23mΩ

Gate-source voltage (V)

±20V

Power dissipation (W)

200W
Gate charge

86.7nC
Kind of channel

Enhanced
Polarisation

Unipolar

Mounting

THT

Case

TO220AB
Kind of package

Bulk
IRF3710PBF

Data sheet

Drain current (A)
57A
Drain-source voltage (V)
100V
On-state resistance
23mΩ
Gate-source voltage (V)
±20V
Power dissipation (W)
200W
Case
TO220AB
Mounting
THT
Manufacturer
INFINEON TECHNOLOGIES
Kind of package
Bulk
Type of transistor
N-MOSFET
Gate charge
86.7nC
Kind of channel
Enhanced
Technology
HEXFET®
Polarisation
Unipolar
Operating temperature
-55...+175°C
Turn-off time
45ns
Turn-on time
12ns
Fall Time
47ns
Rise Time
58ns

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IRF3710PBF

IRF3710PBF

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