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Specyfication

Manufacturer

VISHAY

Type of transistor

N-MOSFET

Drain current (A)

11A

Pulsed drain current (A)

72A

Drain-source voltage (V)

200V

On-state resistance  RDS(on)3

180mΩ

Gate-source voltage (V)

±20V

Power dissipation (W)

130W

Gate charge

70nC

Kind of channel

Enhanced

Polarisation

Unipolar

Mounting

SMD

Case

D2PAK

Kind of package

Bulk

IRF640STRLPBF

Data sheet

Drain current (A)
11A
Drain-source voltage (V)
200V
On-state resistance
0.18Ω
Gate-source voltage (V)
±20V
Power dissipation (W)
130W
Case
D2PAK
Mounting
SMD
Manufacturer
VISHAY
Kind of package
Bulk
Type of transistor
N-MOSFET
Gate charge
70nC
Kind of channel
Enhanced
Polarisation
Unipolar
Operating temperature
-55...+150°C
Turn-off time
45ns
Turn-on time
14ns
Fall Time
36ns
Rise Time
51ns

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IRF640STRLPBF

IRF640STRLPBF

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