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Specyfication

Manufacturer

INFINEON TECHNOLOGIES

Type of transistor

N-MOSFET

Technology

HEXFET®

Drain current (A)

30A

Drain-source voltage (V)

100V

On-state resistance  RDS(on)3

36mΩ

Gate-source voltage (V)

±20V

Power dissipation (W)

160W

Gate charge

110nC

Kind of channel

Enhanced

Polarisation

Unipolar

Mounting

THT

Case

TO247AC

Kind of package

Bulk

IRFP150NPBF

Data sheet

Drain current (A)
30A
Drain-source voltage (V)
100V
On-state resistance
36mΩ
Gate-source voltage (V)
±20V
Power dissipation (W)
160W
Case
TO247AC
Mounting
THT
Manufacturer
INFINEON TECHNOLOGIES
Kind of package
Bulk
Type of transistor
N-MOSFET
Gate charge
110nC
Kind of channel
Enhanced
Technology
HEXFET®
Polarisation
Unipolar
Operating temperature
-55...+175°C
Turn-off time
45ns
Turn-on time
11ns
Fall Time
40ns
Rise Time
56ns

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IRFP150NPBF

IRFP150NPBF

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