IRFP150NPBF
Reference: IRFP150NPBF
8.61 zł
Tax included
Transistor: N-MOSFET; unipolar; 100V; 30A; 160W; TO247AC
Specyfication |
|
Manufacturer |
INFINEON TECHNOLOGIES |
Type of transistor |
N-MOSFET |
Technology |
HEXFET® |
Drain current (A) |
30A |
Drain-source voltage (V) |
100V |
On-state resistance RDS(on)3 |
36mΩ |
Gate-source voltage (V) |
±20V |
Power dissipation (W) |
160W |
| Gate charge |
110nC |
| Kind of channel |
Enhanced |
| Polarisation |
Unipolar |
Mounting |
THT |
Case |
TO247AC |
| Kind of package |
Bulk |
IRFP150NPBF
Data sheet
- Drain current (A)
- 30A
- Drain-source voltage (V)
- 100V
- On-state resistance
- 36mΩ
- Gate-source voltage (V)
- ±20V
- Power dissipation (W)
- 160W
- Case
- TO247AC
- Mounting
- THT
- Manufacturer
- INFINEON TECHNOLOGIES
- Kind of package
- Bulk
- Type of transistor
- N-MOSFET
- Gate charge
- 110nC
- Kind of channel
- Enhanced
- Technology
- HEXFET®
- Polarisation
- Unipolar
- Operating temperature
- -55...+175°C
- Turn-off time
- 45ns
- Turn-on time
- 11ns
- Fall Time
- 40ns
- Rise Time
- 56ns