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Specyfication

Manufacturer

INFINEON TECHNOLOGIES

Type of transistor

N-MOSFET

Drain current (A)

70A

Drain-source voltage (V)

300V

On-state resistance  RDS(on)3

25.5mΩ

Gate-source voltage (V)

±20V

Power dissipation (W)

517W

Gate charge

180nC

Kind of channel

Enhanced

Polarisation

Unipolar

Mounting

THT

Case

TO247AC

Kind of package

Bulk

IRFP4868PBF

Data sheet

Drain current (A)
70A
Drain-source voltage (V)
300V
On-state resistance
8mΩ
Gate-source voltage (V)
±20V
Power dissipation (W)
517W
Case
TO247AC
Mounting
THT
Manufacturer
INFINEON TECHNOLOGIES
Kind of package
Bulk
Type of transistor
N-MOSFET
Gate charge
180nC
Kind of channel
Enhanced
Technology
HEXFET®
Polarisation
Unipolar
Operating temperature
-55...+175°C
Turn-off time
62ns
Turn-on time
24ns
Fall Time
45ns
Rise Time
16ns

Download

IRFP4868PBF

IRFP4868PBF

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