IRFP250MPBF
Price
8.61 zł
Availability: 8 In Stock
Transistor: N-MOSFET; unipolar; 200V; 30A; 214W; TO247AD
IRF640NPBF
Reference: IRF640NPBF
3.08 zł
Tax included
Transistor: N-MOSFET; unipolar; 200V; 18A; 150W; TO220AB
Specyfication |
|
Manufacturer |
INFINEON TECHNOLOGIES |
Type of transistor |
N-MOSFET |
Technology |
HEXFET® |
Drain current (A) |
18A |
Drain-source voltage (V) |
200V |
On-state resistance RDS(on)3 |
150mΩ |
Gate-source voltage (V) |
±20V |
Power dissipation (W) |
150W |
| Gate charge |
44.7nC |
| Kind of channel |
Enhanced |
| Polarisation |
Unipolar |
Mounting |
THT |
Case |
TO220AB |
| Kind of package |
Bulk |
IRF640NPBF
Data sheet
- Drain current (A)
- 18A
- Drain-source voltage (V)
- 200V
- On-state resistance
- 0.15Ω
- Gate-source voltage (V)
- ±20V
- Power dissipation (W)
- 150W
- Case
- TO220AB
- Mounting
- THT
- Manufacturer
- INFINEON TECHNOLOGIES
- Kind of package
- Bulk
- Type of transistor
- N-MOSFET
- Gate charge
- 44.7nC
- Kind of channel
- Enhanced
- Technology
- HEXFET®
- Polarisation
- Unipolar
- Operating temperature
- -55...+175°C
- Turn-off time
- 23ns
- Turn-on time
- 10ns
- Fall Time
- 5.5ns
- Rise Time
- 19ns
Transistor: N-MOSFET; unipolar; 200V; 18A; 150W; TO220AB
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