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    IRF1404PBF | Transistor: N-MOSFET; unipolar; 40V; 162A; 200W; TO220AB
IRF1404PBF | Transistor: N-MOSFET; unipolar; 40V; 162A; 200W; TO220AB

IRF1404PBF

Reference: IRF1404PBF

8.86 zł
Tax included

Transistor: N-MOSFET; unipolar; 40V; 162A; 200W; TO220AB

Quantity

Specyfication

Manufacturer

INFINEON TECHNOLOGIES

Type of transistor

N-MOSFET

Technology

HEXFET®

Drain current (A)

162A

Drain-source voltage (V)

40V

On-state resistance  RDS(on)3

4mΩ

Gate-source voltage (V)

±20V

Power dissipation (W)

200W
Gate charge

160nC
Kind of channel

Enhanced
Polarisation

Unipolar

Mounting

THT

Case

TO220AB
Kind of package

Bulk
IRF1404PBF

Data sheet

Drain current (A)
162A
Drain-source voltage (V)
40V
On-state resistance
4mΩ
Gate-source voltage (V)
±20V
Power dissipation (W)
200W
Case
TO220AB
Mounting
THT
Manufacturer
INFINEON TECHNOLOGIES
Kind of package
Bulk
Type of transistor
N-MOSFET
Gate charge
160nC
Kind of channel
Enhanced
Technology
HEXFET®
Polarisation
Unipolar
Operating temperature
-55...+175°C
Turn-off time
46ns
Turn-on time
17ns
Fall Time
33ns
Rise Time
190ns

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IRF1404PBF

IRF1404PBF

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