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    IRF820PBF | Transistor: N-MOSFET; unipolar; 500V; 1.6A; 50W; TO220AB
IRF820PBF | Transistor: N-MOSFET; unipolar; 500V; 1.6A; 50W; TO220AB

IRF820PBF

Reference: IRF820PBF

4.12 zł
Tax included

Transistor: N-MOSFET; unipolar; 500V; 1.6A; 50W; TO220AB

Quantity

Specyfication

Manufacturer

VISHAY

Type of transistor

N-MOSFET

Drain current (A)

1.6A

Drain-source voltage (V)

500V

On-state resistance  RDS(on)3

3Ω

Gate-source voltage (V)

±20V

Power dissipation (W)

50W
Gate charge

24nC
Kind of channel

Enhanced
Polarisation

Unipolar

Mounting

THT

Case

TO220AB
Kind of package

Bulk
IRF820PBF

Data sheet

Drain current (A)
1.6A
Drain-source voltage (V)
500V
On-state resistance
3Ω
Gate-source voltage (V)
±20V
Power dissipation (W)
50W
Case
TO220AB
Mounting
THT
Manufacturer
VISHAY
Kind of package
Bulk
Type of transistor
N-MOSFET
Gate charge
24nC
Kind of channel
Enhanced
Polarisation
Unipolar
Operating temperature
-55...+150°C
Turn-off time
33ns
Turn-on time
8ns
Fall Time
16ns
Rise Time
8.6ns

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IRF820PBF

IRF820PBF

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