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    IRF740PBF | Transistor: N-MOSFET; unipolar; 400V; 6,3A; 125W; TO220AB
IRF740PBF | Transistor: N-MOSFET; unipolar; 400V; 6,3A; 125W; TO220AB

IRF740PBF

Reference: IRF740PBF

8.61 zł
Tax included

Transistor: N-MOSFET; unipolar; 400V; 6,3A; 125W; TO220AB

Quantity

Specyfication

Manufacturer

VISHAY

Type of transistor

N-MOSFET

Technology

Si

Drain current (A)

10A

Drain-source voltage (V)

400V

On-state resistance  RDS(on)3

550mΩ

Gate-source voltage (V)

±20V

Power dissipation (W)

125W
Gate charge

63nC
Kind of channel

Enhanced
Polarisation

Unipolar

Mounting

THT

Case

TO220AB
Kind of package

Tube
IRF740PBF

Data sheet

Drain current (A)
10A
Drain-source voltage (V)
400V
On-state resistance
0.55Ω
Gate-source voltage (V)
±20V
Power dissipation (W)
125W
Case
TO220AB
Mounting
THT
Manufacturer
VISHAY
Kind of package
Tube
Type of transistor
N-MOSFET
Gate charge
63nC
Kind of channel
Enhanced
Technology
Si
Polarisation
Unipolar
Operating temperature
-55...+150°C
Turn-off time
50ns
Turn-on time
14ns
Fall Time
24ns
Rise Time
27ns

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IRF740PBF

IRF740PBF

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