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    IRF630NPBF | Transistor: N-MOSFET; unipolar; 200V; 9.5A; 82W; TO220AB
IRF630NPBF | Transistor: N-MOSFET; unipolar; 200V; 9.5A; 82W; TO220AB

IRF630NPBF

Reference: IRF630NPBF

3.32 zł
Tax included

Transistor: N-MOSFET; unipolar; 200V; 9.5A; 82W; TO220AB

Quantity

Specyfication

Manufacturer

INFINEON TECHNOLOGIES

Type of transistor

N-MOSFET

Technology

HEXFET®

Drain current (A)

9.5A

Drain-source voltage (V)

200V

On-state resistance  RDS(on)3

300mΩ

Gate-source voltage (V)

±20V

Power dissipation (W)

82W
Gate charge

23.3nC
Kind of channel

Enhanced
Polarisation

Unipolar

Mounting

THT

Case

TO220AB
Kind of package

Bulk
IRF630NPBF

Data sheet

Drain current (A)
9.5A
Drain-source voltage (V)
200V
On-state resistance
0.3Ω
Gate-source voltage (V)
±20V
Power dissipation (W)
82W
Case
TO220AB
Mounting
THT
Manufacturer
INFINEON TECHNOLOGIES
Kind of package
Bulk
Type of transistor
N-MOSFET
Gate charge
23.3nC
Kind of channel
Enhanced
Technology
HEXFET®
Polarisation
Unipolar
Operating temperature
-55...+175°C
Turn-off time
27ns
Turn-on time
7.9ns
Fall Time
15ns
Rise Time
14ns

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IRF630NPBF

IRF630NPBF

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