• 29nC(x)
• 61nC(x)
• Clear all(x)

Manufacturer

VISHAY(2)

Type of transistor

P-MOSFET (2)

Mounting

THT(2)

Power dissipation (W)

74W(1)

280W(1)

Gate charge

12.7nC(1)

23.3nC(1)

29nC(1)

38.7nC(1)

42nC(1)

44nC(2)

61nC(1)

64.7nC(2)

66nC(1)

120nC(3)

Gate-source voltage (V)

±20V(2)

On-state resistance

0.2Ω(1)

0.8Ω(1)

Drain-source voltage (V)

-100V(1)

-200V(1)

Drain current (A)

-4A(1)

-15A(1)

Turn-on time

12ns(1)

16ns(1)

Rise Time

27ns(1)

73ns(1)

Turn-off time

28ns(1)

34ns(1)

Fall Time

24ns(1)

57ns(1)

Kind of channel

Enhanced(2)

Case

TO220AB(1)

TO247AC(1)

Kind of package

Bulk(2)

Price

-