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Specyfication

Manufacturer

VISHAY

Type of transistor

P-MOSFET

Drain current (A)

-4A

Drain-source voltage (V)

-200V

On-state resistance  RDS(on)3

800mΩ

Gate-source voltage (V)

±20V

Power dissipation (W)

74W

Gate charge

29nC

Kind of channel

Enhanced

Polarisation

Unipolar

Mounting

THT

Case

TO220AB

Kind of package

Bulk

IRF9630PBF

Data sheet

Drain current (A)
-4A
Drain-source voltage (V)
-200V
On-state resistance
0.8Ω
Gate-source voltage (V)
±20V
Power dissipation (W)
74W
Case
TO220AB
Mounting
THT
Manufacturer
VISHAY
Kind of package
Bulk
Type of transistor
P-MOSFET
Gate charge
29nC
Kind of channel
Enhanced
Polarisation
Unipolar
Operating temperature
-55...+150°C
Turn-off time
28ns
Turn-on time
12ns
Fall Time
24ns
Rise Time
27ns

Download

IRF9630PBF

IRF9630PBF

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