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    IRF6215PBF |Transistor: P-MOSFET; unipolar; -150V; -13A; 110W; TO220AB
IRF6215PBF |Transistor: P-MOSFET; unipolar; -150V; -13A; 110W; TO220AB

IRF6215PBF

Reference: IRF6215PBF

3.69 zł
Tax included

Transistor: P-MOSFET; unipolar; -150V; -13A; 110W; TO220AB

Quantity

Specyfication

Manufacturer

INFINEON TECHNOLOGIES

Type of transistor

P-MOSFET

Technology

HEXFET®

Drain current (A)

-13A

Drain-source voltage (V)

-150V

On-state resistance  RDS(on)3

290mΩ

Gate-source voltage (V)

±20V

Power dissipation (W)

110W
Gate charge

66nC
Kind of channel

Enhanced
Polarisation

Unipolar

Mounting

THT

Case

TO220AB
Kind of package

Bulk
IRF6215PBF

Data sheet

Drain current (A)
-13A
Drain-source voltage (V)
-150V
On-state resistance
0.29Ω
Gate-source voltage (V)
±20V
Power dissipation (W)
110W
Case
TO220AB
Mounting
THT
Manufacturer
INFINEON TECHNOLOGIES
Kind of package
Bulk
Type of transistor
P-MOSFET
Gate charge
66nC
Kind of channel
Enhanced
Technology
HEXFET®
Polarisation
Unipolar
Operating temperature
-55...+175°C
Turn-off time
53ns
Turn-on time
14ns
Fall Time
37ns
Rise Time
36ns

Download

IRF6215PBF

IRF6215PBF

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