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Specyfication

Manufacturer

INFINEON TECHNOLOGIES

Type of transistor

P-MOSFET

Technology

HEXFET®

Drain current (A)

-23A

Drain-source voltage (V)

-100V

On-state resistance  RDS(on)3

117mΩ

Gate-source voltage (V)

±20V

Power dissipation (W)

140W

Gate charge

64.7nC

Kind of channel

Enhanced

Polarisation

Unipolar

Mounting

THT

Case

TO220AB

Kind of package

Bulk

IRF9540NPBF

Data sheet

Drain current (A)
-23A
Drain-source voltage (V)
-100V
On-state resistance
0.117Ω
Gate-source voltage (V)
±20V
Power dissipation (W)
79W
Case
TO220AB
Mounting
THT
Manufacturer
INFINEON TECHNOLOGIES
Kind of package
Bulk
Type of transistor
P-MOSFET
Gate charge
64.7nC
Kind of channel
Enhanced
Technology
HEXFET®
Polarisation
Unipolar
Operating temperature
-55...+175°C
Turn-off time
51ns
Turn-on time
15ns
Fall Time
51ns
Rise Time
67ns

Download

IRF9540NPBF

IRF9540NPBF

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