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    IRF9530NPBF | Transistor: P-MOSFET; unipolar; -100V; -14A; 79W; TO220AB
IRF9530NPBF | Transistor: P-MOSFET; unipolar; -100V; -14A; 79W; TO220AB

IRF9530NPBF

Reference: IRF9530NPBF

4.92 zł
Tax included

Transistor: P-MOSFET; unipolar; -100V; -14A; 79W; TO220AB

Quantity

Specyfication

Manufacturer

INFINEON TECHNOLOGIES

Type of transistor

P-MOSFET

Technology

HEXFET®

Drain current (A)

-14A

Drain-source voltage (V)

-100V

On-state resistance  RDS(on)3

200mΩ

Gate-source voltage (V)

±20V

Power dissipation (W)

79W
Gate charge

38.7nC
Kind of channel

Enhanced
Polarisation

Unipolar

Mounting

THT

Case

TO220AB
Kind of package

Bulk
IRF9530NPBF

Data sheet

Drain current (A)
-14A
Drain-source voltage (V)
-100V
On-state resistance
0.29Ω
Gate-source voltage (V)
±20V
Power dissipation (W)
79W
Case
TO220AB
Mounting
THT
Manufacturer
INFINEON TECHNOLOGIES
Kind of package
Bulk
Type of transistor
P-MOSFET
Gate charge
38.7nC
Kind of channel
Enhanced
Technology
HEXFET®
Polarisation
Unipolar
Operating temperature
-55...+175°C
Turn-off time
45ns
Turn-on time
15ns
Fall Time
46ns
Rise Time
58ns

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IRF9530NPBF

IRF9530NPBF

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