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    IRF5210PBF | Transistor: P-MOSFET; unipolar; -100V; -40A; 200W; TO220AB
IRF5210PBF | Transistor: P-MOSFET; unipolar; -100V; -40A; 200W; TO220AB

IRF5210PBF

Reference: IRF5210PBF

9.84 zł
Tax included

Transistor: P-MOSFET; unipolar; -100V; -40A; 200W; TO220AB

Quantity

Specyfication

Manufacturer

INFINEON TECHNOLOGIES

Type of transistor

P-MOSFET

Technology

HEXFET®

Drain current (A)

-40A

Drain-source voltage (V)

-100V

On-state resistance  RDS(on)3

60mΩ

Gate-source voltage (V)

±20V

Power dissipation (W)

200W
Gate charge

120nC
Kind of channel

Enhanced
Polarisation

Unipolar

Mounting

THT

Case

TO220AB
Kind of package

Bulk
IRF5210PBF

Data sheet

Drain current (A)
-40A
Drain-source voltage (V)
-100V
On-state resistance
60mΩ
Gate-source voltage (V)
±20V
Power dissipation (W)
200W
Case
TO220AB
Mounting
THT
Manufacturer
INFINEON TECHNOLOGIES
Kind of package
Bulk
Type of transistor
P-MOSFET
Gate charge
120nC
Kind of channel
Enhanced
Technology
HEXFET®
Polarisation
Unipolar
Operating temperature
-55...+175°C
Turn-off time
79ns
Turn-on time
17ns
Fall Time
81ns
Rise Time
86ns

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IRF5210PBF

IRF5210PBF

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