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    IRF9Z34NPBF | Transistor: P-MOSFET; unipolar; -55V; -19A; 68W; TO220AB
IRF9Z34NPBF | Transistor: P-MOSFET; unipolar; -55V; -19A; 68W; TO220AB

IRF9Z34NPBF

Reference: IRF9Z34NPBF

2.83 zł
Tax included

Transistor: P-MOSFET; unipolar; -55V; -19A; 68W; TO220AB

Quantity

Specyfication

Manufacturer

INFINEON TECHNOLOGIES

Type of transistor

P-MOSFET

Technology

HEXFET®

Drain current (A)

-19A

Drain-source voltage (V)

-55V

On-state resistance  RDS(on)3

100mΩ

Gate-source voltage (V)

±20V

Power dissipation (W)

68W
Gate charge

23.3nC
Kind of channel

Enhanced
Polarisation

Unipolar

Mounting

THT

Case

TO220AB
Kind of package

Bulk
IRF9Z34NPBF

Data sheet

Drain current (A)
-19A
Drain-source voltage (V)
-55V
On-state resistance
0.1Ω
Gate-source voltage (V)
±20V
Power dissipation (W)
68W
Case
TO220AB
Mounting
THT
Manufacturer
INFINEON TECHNOLOGIES
Kind of package
Bulk
Type of transistor
P-MOSFET
Gate charge
23.3nC
Kind of channel
Enhanced
Technology
HEXFET®
Polarisation
Unipolar
Operating temperature
-55...+175°C
Turn-off time
30ns
Turn-on time
13ns
Fall Time
41ns
Rise Time
55ns

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IRF9Z34NPBF

IRF9Z34NPBF

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