• 26ns(x)
• 170ns(x)
• Clear all(x)

Manufacturer

INFINEON TECHNOLOGIES(1)

TOSHIBA(1)

Type of transistor

IGBT(2)

Mounting

THT(2)

Technology

TrenchStop®(1)

Power dissipation (W)

30W(1)

333W(1)

Gate charge

310nC(1)

Collector-Emitter Saturation Voltage

1.5V(1)

1.9V(1)

Collector-Emitter Voltage VCEO

600V(2)

Gate-emitter voltage

±20V(2)

Collector current

15A(1)

80A(1)

Pulsed collector current

30A(1)

150A(1)

Turn-on time

23ns(1)

26ns(1)

27ns(1)

29ns(1)

32ns(1)

33ns(1)

48ns(1)

50ns(2)

170ns(1)

250ns(1)

300ns(3)

400ns(1)

450ns(1)

Turn-off time

299ns(1)

340ns(1)

Turn-on switching energy

1.2mJ(1)

Turn-off switching Energy

1.4mJ(1)

Gate-Emitter Leakage Current

100nA(1)

500nA(1)

Operating temperature

-40...+175°C(1)

-55...+150°C(1)

Case

PG-TO247-3(1)

TO220NIS(1)

Kind of package

Bulk(2)

Price

-