IKW15N120T2FKSA1
Price
25.83 zł
Availability: 10 In Stock
Transistor: IGBT; 1.2kV; 30A; 235W; PG-TO247-3; T2; single transistor
IKW50N60T
Reference: IKW50N60T
30.75 zł
Tax included
Transistor: IGBT; 600V; 80A; 333W; PG-TO247-3; single transistor
Transistor: IGBT; 600V; 80A; 333W; PG-TO247-3; single transistor
IKW50N60T
Data sheet
- Power dissipation (W)
- 333W
- Case
- PG-TO247-3
- Mounting
- THT
- Manufacturer
- INFINEON TECHNOLOGIES
- Kind of package
- Bulk
- Type of transistor
- IGBT
- Gate charge
- 310nC
- Technology
- TrenchStop®
- Operating temperature
- -40...+175°C
- Collector-Emitter Voltage VCEO
- 600V
- Collector current
- 80A
- Gate-emitter voltage
- ±20V
- Pulsed collector current
- 150A
- Semiconductor structure
- single transistor
- Features of semiconductor devices
- integrated anti-parallel diode
- Turn-off time
- 299ns
- Turn-on time
- 26ns
- Turn-off switching Energy
- 1.4mJ
- Turn-on switching energy
- 1.2mJ
- Collector-Emitter Saturation Voltage
- 1.5V
- Gate-Emitter Leakage Current
- 100nA
Transistor: IGBT; 600V; 80A; 333W; PG-TO247-3; single transistor
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