IKW40N120T2
Reference: IKW40N120T2
41.82 zł
Tax included
Transistor: IGBT; 1.2kV; 75A; 480W; PG-TO247-3; T2; single transistor
Transistor: IGBT; 1.2kV; 75A; 480W; PG-TO247-3; T2; single transistor
IKW40N120T2
Data sheet
- Power dissipation (W)
- 480W
- Case
- PG-TO247-3
- Mounting
- THT
- Manufacturer
- INFINEON TECHNOLOGIES
- Kind of package
- Bulk
- Type of transistor
- IGBT
- Gate charge
- 192nC
- Technology
- TrenchStop® 2
- Operating temperature
- -40...+175°C
- Manufacturer series
- T2
- Collector-Emitter Voltage VCEO
- 1.2kV
- Collector current
- 75A
- Gate-emitter voltage
- ±20V
- Pulsed collector current
- 160A
- Semiconductor structure
- single transistor
- Features of semiconductor devices
- integrated anti-parallel diode
- Turn-off time
- 314ns
- Turn-on time
- 33ns
- Turn-off switching Energy
- 2.05mJ
- Turn-on switching energy
- 3.2mJ
- Collector-Emitter Saturation Voltage
- 1.75V
- Gate-Emitter Leakage Current
- 200nA