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Transistor: IGBT; 1.2kV; 75A; 480W; PG-TO247-3; T2; single transistor

IKW40N120T2

Data sheet

Power dissipation (W)
480W
Case
PG-TO247-3
Mounting
THT
Manufacturer
INFINEON TECHNOLOGIES
Kind of package
Bulk
Type of transistor
IGBT
Gate charge
192nC
Technology
TrenchStop® 2
Operating temperature
-40...+175°C
Manufacturer series
T2
Collector-Emitter Voltage VCEO
1.2kV
Collector current
75A
Gate-emitter voltage
±20V
Pulsed collector current
160A
Semiconductor structure
single transistor
Features of semiconductor devices
integrated anti-parallel diode
Turn-off time
314ns
Turn-on time
33ns
Turn-off switching Energy
2.05mJ
Turn-on switching energy
3.2mJ
Collector-Emitter Saturation Voltage
1.75V
Gate-Emitter Leakage Current
200nA

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IKW40N120T2

IKW40N120T2

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