IKW25N120T2
Reference: IKW25N120T2
29.52 zł
Tax included
Transistor: IGBT; 1.2kV; 50A; 349W; PG-TO247-3; single transistor
Transistor: IGBT; 1.2kV; 50A; 349W; PG-TO247-3; single transistor
IKW25N120T2
Data sheet
- Power dissipation (W)
- 349W
- Case
- PG-TO247-3
- Mounting
- THT
- Manufacturer
- INFINEON TECHNOLOGIES
- Kind of package
- Bulk
- Type of transistor
- IGBT
- Gate charge
- 120nC
- Technology
- TrenchStop® 2
- Operating temperature
- -40...+175°C
- Manufacturer series
- T2
- Collector-Emitter Voltage VCEO
- 1.2kV
- Collector current
- 50A
- Gate-emitter voltage
- ±20V
- Pulsed collector current
- 100A
- Semiconductor structure
- single transistor
- Features of semiconductor devices
- integrated anti-parallel diode
- Turn-off time
- 265ns
- Turn-on time
- 27ns
- Turn-off switching Energy
- 1.35mJ
- Turn-on switching energy
- 1.55mJ
- Collector-Emitter Saturation Voltage
- 1.7V
- Gate-Emitter Leakage Current
- 200nA
Transistor: IGBT; 1.2kV; 50A; 349W; PG-TO247-3; single transistor
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