IKW50N60T
Price
30.75 zł
Availability: 10 In Stock
Transistor: IGBT; 600V; 80A; 333W; PG-TO247-3; single transistor
GT45G122
Reference: GT45G122
17.22 zł
Tax included
Transistor: IGBT; 400V; 120A; 25W; TO-220SIS; single transistor
Transistor: IGBT; 400V; 120A; 25W; TO-220SIS; single transistor
Applications:
PDP-TV (Plasma display panels)
GT45G122
Data sheet
- Power dissipation (W)
- 25W
- Case
- TO220SIS
- Mounting
- THT
- Manufacturer
- TOSHIBA
- Kind of package
- Bulk
- Type of transistor
- IGBT
- Operating temperature
- -55...+150°C
- Collector-Emitter Voltage VCEO
- 400V
- Collector current
- 120A
- Gate-emitter voltage
- 15V
- Pulsed collector current
- 200A
- Semiconductor structure
- single transistor
- Features of semiconductor devices
- integrated anti-parallel diode
- Collector-Emitter Saturation Voltage
- 2.4V
- Gate-Emitter Leakage Current
- 500nA
Transistor: IGBT; 400V; 120A; 25W; TO-220SIS; single transistor
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