IKW25T120
Reference: IKW25T120
25.83 zł
Tax included
Transistor: IGBT; 1.2kV; 30A; 110W; PG-TO247-3; single transistor
Transistor: IGBT; 1.2kV; 30A; 110W; PG-TO247-3; single transistor
IKW25T120
Data sheet
- Power dissipation (W)
- 190W
- Case
- PG-TO247-3
- Mounting
- THT
- Manufacturer
- INFINEON TECHNOLOGIES
- Kind of package
- Bulk
- Type of transistor
- IGBT
- Gate charge
- 155nC
- Technology
- TrenchStop®
- Operating temperature
- -40...+150°C
- Collector-Emitter Voltage VCEO
- 1.2kV
- Collector current
- 50A
- Gate-emitter voltage
- ±20V
- Pulsed collector current
- 75A
- Semiconductor structure
- single transistor
- Features of semiconductor devices
- integrated anti-parallel diode
- Turn-off time
- 560ns
- Turn-on time
- 50ns
- Turn-off switching Energy
- 2.2mJ
- Turn-on switching energy
- 2.0mJ
- Collector-Emitter Saturation Voltage
- 1.7V
- Gate-Emitter Leakage Current
- 600nA
Transistor: IGBT; 1.2kV; 30A; 110W; PG-TO247-3; single transistor
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