GT30J122
Reference: GT30J122
17.22 zł
Tax included
Transistor: IGBT; 600V; 30A; 75W; TO-3P(N)IS; single transistor
Transistor: IGBT; 600V; 30A; 75W; TO-3P(N)IS; single transistor
Applications:
Power factor correction
GT30J122
Data sheet
- Power dissipation (W)
- 75W
- Case
- TO3P(N)IS
- Mounting
- THT
- Manufacturer
- TOSHIBA
- Kind of package
- Bulk
- Type of transistor
- IGBT
- Operating temperature
- -55...+150°C
- Collector-Emitter Voltage VCEO
- 600V
- Collector current
- 30A
- Gate-emitter voltage
- ±20V
- Pulsed collector current
- 100A
- Semiconductor structure
- single transistor
- Features of semiconductor devices
- integrated anti-parallel diode
- Turn-off time
- 400ns
- Turn-on time
- 300ns
- Collector-Emitter Saturation Voltage
- 2.1V
- Gate-Emitter Leakage Current
- 500nA
Transistor: IGBT; 600V; 30A; 75W; TO-3P(N)IS; single transistor
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