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Transistor: IGBT; 1,5kV; 40A; 200W; TO-3P(LH); single transistor

Applications:

Parallel Resonance Inverter Switching Applications

GT40T301

Data sheet

Power dissipation (W)
200W
Case
TO3P(LH)
Mounting
THT
Manufacturer
TOSHIBA
Kind of package
Bulk
Type of transistor
IGBT
Operating temperature
-55...+150°C
Collector-Emitter Voltage VCEO
1.5kV
Collector current
40A
Gate-emitter voltage
±25V
Pulsed collector current
80A
Semiconductor structure
single transistor
Features of semiconductor devices
integrated anti-parallel diode
Turn-off time
600ns
Turn-on time
450ns
Collector-Emitter Saturation Voltage
3.7V
Gate-Emitter Leakage Current
500nA

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GT40T301

GT40T301

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