GT40T301
Reference: GT40T301
15.99 zł
Tax included
Transistor: IGBT; 1,5kV; 40A; 200W; TO-3P(LH); single transistor
Transistor: IGBT; 1,5kV; 40A; 200W; TO-3P(LH); single transistor
Applications:
Parallel Resonance Inverter Switching Applications
GT40T301
Data sheet
- Power dissipation (W)
- 200W
- Case
- TO3P(LH)
- Mounting
- THT
- Manufacturer
- TOSHIBA
- Kind of package
- Bulk
- Type of transistor
- IGBT
- Operating temperature
- -55...+150°C
- Collector-Emitter Voltage VCEO
- 1.5kV
- Collector current
- 40A
- Gate-emitter voltage
- ±25V
- Pulsed collector current
- 80A
- Semiconductor structure
- single transistor
- Features of semiconductor devices
- integrated anti-parallel diode
- Turn-off time
- 600ns
- Turn-on time
- 450ns
- Collector-Emitter Saturation Voltage
- 3.7V
- Gate-Emitter Leakage Current
- 500nA