IKW50N60H3
Price
25.83 zł
Availability: 10 In Stock
Transistor: IGBT; 600V; 100A; 333W; PG-TO247-3; H3; single transistor
GT40Q321
Reference: GT40Q321
17.22 zł
Tax included
Transistor: IGBT; 1,2kV; 42A; 170W; TO-3P(N); single transistor
Transistor: IGBT; 1,2kV; 42A; 170W; TO-3P(N); single transistor
Applications:
Voltage Resonance Inverter Switching Application
GT40Q321
Data sheet
- Power dissipation (W)
- 170W
- Case
- TO3P(N)
- Mounting
- THT
- Manufacturer
- TOSHIBA
- Kind of package
- Bulk
- Type of transistor
- IGBT
- Operating temperature
- -55...+150°C
- Collector-Emitter Voltage VCEO
- 1.2kV
- Collector current
- 42A
- Gate-emitter voltage
- ±25V
- Pulsed collector current
- 80A
- Semiconductor structure
- single transistor
- Features of semiconductor devices
- integrated anti-parallel diode
- Turn-off time
- 570ns
- Turn-on time
- 250ns
- Collector-Emitter Saturation Voltage
- 2.8V
- Gate-Emitter Leakage Current
- 500nA
Transistor: IGBT; 1,2kV; 42A; 170W; TO-3P(N); single transistor
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