close

We would like to inform you that our web shop uses cookie technology and at the same time does not automatically collect any information with the exception of the information contained in these files (so-called "cookies").

×

Transistor: IGBT; 1.2kV; 75A; 270W; PG-TO247-3; single transistor

IKW40T120FKSA1

Data sheet

Power dissipation (W)
270W
Case
PG-TO247-3
Mounting
THT
Manufacturer
INFINEON TECHNOLOGIES
Kind of package
Bulk
Type of transistor
IGBT
Gate charge
203nC
Technology
TrenchStop®
Operating temperature
-40...+175°C
Collector-Emitter Voltage VCEO
1.2kV
Collector current
75A
Gate-emitter voltage
±20V
Pulsed collector current
105A
Semiconductor structure
single transistor
Features of semiconductor devices
integrated anti-parallel diode
Turn-off time
480ns
Turn-on time
48ns
Turn-off switching Energy
3.2mJ
Turn-on switching energy
3.3mJ
Collector-Emitter Saturation Voltage
1.7V
Gate-Emitter Leakage Current
600nA

Download

IKW40T120FKSA1

IKW40T120FKSA1

Download (344.62KB)

16 other products in the same category: