IKW25T120
Price
25.83 zł
Availability: 10 In Stock
Transistor: IGBT; 1.2kV; 30A; 110W; PG-TO247-3; single transistor
GT20J101
Reference: GT20J101
23.37 zł
Tax included
Transistor: IGBT; 600V; 20A; 130W; TO-3P(N); single transistor
Transistor: IGBT; 600V; 20A; 130W; TO-3P(N); single transistor
Applications:
Motor drives (and UPS/PFC)
GT20J101
Data sheet
- Power dissipation (W)
- 130W
- Case
- TO3P(N)
- Mounting
- THT
- Manufacturer
- TOSHIBA
- Kind of package
- Bulk
- Type of transistor
- IGBT
- Operating temperature
- -55...+150°C
- Collector-Emitter Voltage VCEO
- 600V
- Collector current
- 20A
- Gate-emitter voltage
- ±20V
- Pulsed collector current
- 40A
- Semiconductor structure
- single transistor
- Features of semiconductor devices
- integrated anti-parallel diode
- Turn-off time
- 500ns
- Turn-on time
- 400ns
- Collector-Emitter Saturation Voltage
- 2.1V
- Gate-Emitter Leakage Current
- 500nA
Transistor: IGBT; 600V; 20A; 130W; TO-3P(N); single transistor
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