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Specyfication

Manufacturer

ONSEMI

Type of transistor

NPN

Technology

Si

Maximum DC Collector Current (A)

5A

Collector- Base Voltage VCBO (V)

1000V

Collector- Emitter Voltage VCEO Max

450V

Collector-Emitter Saturation Voltage

1.5V

Power dissipation (W)

100W

Emitter- Base Voltage VEBO

9V

Kind of channel

-

Polarisation

Bipolar

Mounting

THT

Case

TO220AB

Kind of package

Tube

BUT11A

Data sheet

Power dissipation (W)
100W
Case
TO220AB
Mounting
THT
Manufacturer
ONSEMI
Kind of package
Tube
Type of transistor
NPN
Kind of channel
Enhanced
Technology
Si
Polarisation
Bipolar
Operating temperature
-40...+150°C
Collector-Emitter Voltage VCEO
450V
Collector current
5A
Collector-Emitter Saturation Voltage
1.5V
Collector-Base Voltage VCBO
1000V
Emitter-Base Voltage VEBO
9V

Download

BUT11A

BUT11A

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