• 53ns(x)
• 79ns(x)
• Clear all(x)

Manufacturer

INFINEON TECHNOLOGIES(2)

Type of transistor

P-MOSFET (2)

Mounting

THT(2)

Technology

HEXFET®(2)

Power dissipation (W)

110W(1)

200W(1)

Gate charge

66nC(1)

120nC(1)

Gate-source voltage (V)

±20V(2)

On-state resistance

0.29Ω(1)

60mΩ(1)

Drain-source voltage (V)

-100V(1)

-150V(1)

Drain current (A)

-13A(1)

-40A(1)

Turn-on time

14ns(1)

17ns(1)

Rise Time

36ns(1)

86ns(1)

Turn-off time

23ns(1)

28ns(1)

30ns(1)

34ns(1)

39ns(3)

45ns(1)

51ns(2)

53ns(1)

61ns(2)

79ns(1)

Fall Time

37ns(1)

81ns(1)

Kind of channel

Enhanced(2)

Case

TO220AB(2)

Kind of package

Bulk(2)

Price

-