IRF7319TRPBF
Price
2.46 zł
Availability: 10 In Stock
Transistor: N/P-MOSFET; unipolar; 30/-30V; 6.5/-4.9A; 2W; SO8
IRF7309TRPBF
Reference: IRF7309TRPBF
2.46 zł
Tax included
Transistor: N/P-MOSFET; unipolar; 30/-30V; 4/-3A; 1.4W; SO8
Specyfication |
|
Manufacturer |
INFINEON TECHNOLOGIES |
Type of transistor |
N/P-MOSFET |
Technology |
HEXFET® |
Drain current (A) |
4/-3A |
Drain-source voltage (V) |
30/-30V |
On-state resistance RDS(on)3 |
50/100mΩ |
Gate-source voltage (V) |
±20V |
Power dissipation (W) |
1.4W |
| Gate charge |
25nC |
| Kind of channel |
Enhanced |
| Polarisation |
Unipolar |
Mounting |
SMD |
Case |
SO8 |
| Kind of package |
Bulk |
IRF7309TRPBF
Data sheet
- Drain current (A)
- 4/-3A
- Drain-source voltage (V)
- 30/-30V
- On-state resistance
- 50mΩ/100mΩ
- Gate-source voltage (V)
- ±20V
- Power dissipation (W)
- 1.4W
- Case
- SO8
- Mounting
- SMD
- Manufacturer
- INFINEON TECHNOLOGIES
- Kind of package
- Bulk
- Type of transistor
- N/P-MOSFET
- Gate charge
- 25nC
- Kind of channel
- Enhanced
- Technology
- HEXFET®
- Polarisation
- Unipolar
- Operating temperature
- -55...+150°C
- Turn-off time
- 22ns/25ns(N/P)
- Turn-on time
- 6.8ns/11ns(N/P)
- Fall Time
- 7.7ns/18ns(N/P)
- Rise Time
- 21ns/17ns(N/P)
Transistor: N/P-MOSFET; unipolar; 30/-30V; 4/-3A; 1.4W; SO8