IRF7309TRPBF
Price
2.46 zł
Availability: 10 In Stock
Transistor: N/P-MOSFET; unipolar; 30/-30V; 4/-3A; 1.4W; SO8
IRF7319TRPBF
Reference: IRF7319TRPBF
2.46 zł
Tax included
Transistor: N/P-MOSFET; unipolar; 30/-30V; 6.5/-4.9A; 2W; SO8
Specyfication |
|
Manufacturer |
INFINEON TECHNOLOGIES |
Type of transistor |
N/P-MOSFET |
Technology |
HEXFET® |
Drain current (A) |
6.5/-4.9A |
Drain-source voltage (V) |
30/-30V |
On-state resistance RDS(on)3 |
29/58mΩ |
Gate-source voltage (V) |
±20V |
Power dissipation (W) |
2W |
| Gate charge |
22/23nC |
| Kind of channel |
Enhanced |
| Polarisation |
Unipolar |
Mounting |
SMD |
Case |
SO8 |
| Kind of package |
Bulk |
IRF7319TRPBF
Data sheet
- Drain current (A)
- 6,5/-4,9A
- Drain-source voltage (V)
- 30/-30V
- On-state resistance
- 29mΩ/58mΩ
- Gate-source voltage (V)
- ±20V
- Power dissipation (W)
- 2W
- Case
- SO8
- Mounting
- SMD
- Manufacturer
- INFINEON TECHNOLOGIES
- Kind of package
- Bulk
- Type of transistor
- N/P-MOSFET
- Gate charge
- 22/23nC
- Kind of channel
- Enhanced
- Technology
- HEXFET®
- Polarisation
- Unipolar
- Operating temperature
- -40...+150°C
- Turn-off time
- 26ns/34ns(N/P)
- Turn-on time
- 8.1ns/13ns(N/P)
- Fall Time
- 17ns/32ns(N/P)
- Rise Time
- 8.9ns/13ns(N/P)
Transistor: N/P-MOSFET; unipolar; 30/-30V; 6.5/-4.9A; 2W; SO8