• 23ns(x)
• 26ns(x)
• 29ns(x)
• 50ns(x)
• 170ns(x)
• 250ns(x)
• 450ns(x)
• Clear all(x)

Manufacturer

INFINEON TECHNOLOGIES(5)

TOSHIBA(3)

Type of transistor

IGBT(8)

Mounting

THT(8)

Technology

TrenchStop®(3)

TrenchStop® 3(2)

Manufacturer series

H3(2)

Power dissipation (W)

30W(1)

110W(1)

170W(1)

190W(1)

200W(1)

333W(2)

483W(1)

Gate charge

85nC(1)

155nC(1)

185nC(1)

310nC(1)

315nC(1)

Collector-Emitter Saturation Voltage

1.5V(1)

1.7V(2)

1.9V(1)

1.85V(1)

2.05V(1)

2.8V(1)

3.7V(1)

Collector-Emitter Voltage VCEO

1.2kV(4)

1.5kV(1)

600V(3)

Gate-emitter voltage

±20V(6)

±25V(2)

Collector current

15A(1)

30A(1)

40A(1)

42A(1)

50A(1)

80A(2)

100A(1)

Pulsed collector current

30A(1)

45A(1)

75A(1)

80A(2)

150A(1)

160A(1)

200A(1)

Turn-on time

23ns(1)

26ns(1)

27ns(1)

29ns(1)

32ns(1)

33ns(1)

48ns(1)

50ns(2)

170ns(1)

250ns(1)

300ns(3)

400ns(1)

450ns(1)

Turn-off time

235ns(1)

299ns(1)

340ns(1)

366ns(1)

520ns(1)

560ns(1)

570ns(1)

600ns(1)

Turn-on switching energy

1.2mJ(1)

1.3mJ(1)

1.45mJ(1)

2.0mJ(1)

4.4mJ(1)

Turn-off switching Energy

0.91mJ(1)

1.4mJ(2)

2.2mJ(1)

2.6mJ(1)

Gate-Emitter Leakage Current

100nA(3)

500nA(3)

600nA(2)

Operating temperature

-40...+150°C(2)

-40...+175°C(3)

-55...+150°C(3)

Case

PG-TO247-3(5)

TO3P(LH)(1)

TO3P(N)(1)

TO220NIS(1)

Kind of package

Bulk(8)

Price

-