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Categories

IGBT(1)

IGBT transistors(1)

Multichannel transistors(1)

N-Channel MOSFETs(9)

P-Channel MOSFETs(1)

SMD N channel transistors(4)

THT N channel transistors(5)

THT P channel transistors(1)

Unipolar(11)

Manufacturer

INFINEON TECHNOLOGIES(6)

TOSHIBA(1)

VISHAY(5)

Type of transistor

IGBT(1)

N-MOSFET (9)

N/P-MOSFET(1)

P-MOSFET (1)

Mounting

SMD(5)

THT(7)

Technology

HEXFET®(6)

Si(1)

Power dissipation (W)

1.4W(1)

2.5W(3)

2W(1)

25W(2)

30W(1)

45W(1)

48W(1)

50W(1)

68W(1)

74W(3)

75W(2)

79W(3)

82W(1)

88W(1)

92W(1)

100W(1)

110W(3)

120W(1)

125W(5)

130W(2)

140W(2)

150W(6)

160W(3)

170W(3)

180W(1)

190W(4)

200W(12)

214W(1)

235W(1)

270W(1)

280W(3)

300W(2)

310W(1)

330W(1)

333W(2)

349W(1)

370W(1)

480W(1)

483W(1)

517W(2)

520W(3)

Gate charge

21nC(1)

25nC(1)

35nC(1)

38nC(1)

41nC(1)

44nC(1)

63nC(2)

70nC(1)

86.6nC(2)

Gate-source voltage (V)

±12V(1)

±20V(9)

±30V(1)

On-state resistance

0.5Ω(1)

0.18Ω(1)

0.55Ω(2)

0.85Ω(1)

12mΩ(3)

13.4mΩ(1)

44mΩ(1)

50mΩ/100mΩ(1)

Drain-source voltage (V)

-200V(1)

30/-30V(1)

30V(1)

60V(2)

80V(1)

150V(1)

200V(1)

400V(2)

500V(1)

Drain current (A)

-6.8A(1)

4/-3A(1)

5.1A(2)

6.3A(1)

10A(2)

11A(2)

81A(2)

Turn-on time

6.8ns/11ns(N/P)(1)

7.8ns(1)

9.4ns(1)

9ns(1)

11ns(1)

12ns(1)

14ns(4)

16ns(1)

250ns(1)

Rise Time

2.5ns(1)

8.5ns(1)

10ns(1)

21ns/17ns(N/P)(1)

23ns(1)

27ns(2)

43ns(1)

51ns(1)

78ns(1)

140ns(1)

Turn-off time

15ns(1)

19ns(1)

22ns/25ns(N/P)(1)

26ns(1)

29ns(1)

39ns(1)

45ns(1)

48ns(1)

50ns(2)

68ns(1)

570ns(1)

Fall Time

4.0ns(1)

7.7ns/18ns(N/P)(1)

8.6ns(1)

14ns(1)

19ns(1)

24ns(2)

36ns(1)

38ns(1)

53ns(1)

120ns(1)

Kind of channel

Enhanced(11)

Case

D2PAK(1)

SO8(4)

TO3P(N)(1)

TO220AB(6)

Kind of package

Bulk(11)

Tube(1)

Price

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