Categories

IGBT transistors(18)

Manufacturer

INFINEON TECHNOLOGIES(9)

TOSHIBA(9)

Type of transistor

IGBT(18)

Mounting

THT(18)

Technology

TrenchStop®(4)

TrenchStop® 2(3)

TrenchStop® 3(2)

Manufacturer series

H3(2)

T2(3)

Power dissipation (W)

25W(2)

30W(1)

75W(2)

110W(1)

120W(1)

130W(1)

170W(1)

190W(1)

200W(1)

235W(1)

270W(1)

333W(2)

349W(1)

480W(1)

483W(1)

Gate charge

85nC(1)

93nC(1)

120nC(1)

155nC(1)

185nC(1)

192nC(1)

203nC(1)

310nC(1)

315nC(1)

Collector-Emitter Saturation Voltage

1.5V(1)

1.7V(6)

1.9V(1)

1.75V(1)

1.85V(1)

2.05V(1)

2.1V(3)

2.4V(1)

2.5V(1)

2.8V(1)

3.7V(1)

Collector-Emitter Voltage VCEO

1.2kV(8)

1.5kV(1)

400V(1)

450V(1)

600V(7)

Gate-emitter voltage

15V(2)

±20V(13)

±25V(3)

Collector current

15A(1)

20A(1)

30A(5)

40A(1)

42A(1)

50A(2)

75A(2)

80A(2)

100A(1)

120A(2)

Pulsed collector current

30A(1)

40A(1)

45A(1)

60A(1)

75A(1)

80A(2)

100A(4)

105A(1)

150A(1)

160A(2)

200A(3)

Turn-on time

23ns(1)

26ns(1)

27ns(1)

29ns(1)

32ns(1)

33ns(1)

48ns(1)

50ns(2)

170ns(1)

250ns(1)

300ns(3)

400ns(1)

450ns(1)

Turn-off time

235ns(1)

265ns(1)

299ns(1)

314ns(1)

340ns(1)

362ns(1)

366ns(1)

400ns(2)

480ns(1)

500ns(2)

520ns(1)

560ns(1)

570ns(1)

600ns(1)

Turn-on switching energy

1.2mJ(1)

1.3mJ(1)

1.25mJ(1)

1.45mJ(1)

1.55mJ(1)

2.0mJ(1)

3.2mJ(1)

3.3mJ(1)

4.4mJ(1)

Turn-off switching Energy

0.8mJ(1)

0.91mJ(1)

1.4mJ(2)

1.35mJ(1)

2.05mJ(1)

2.2mJ(1)

2.6mJ(1)

3.2mJ(1)

Gate-Emitter Leakage Current

100nA(4)

200nA(2)

500nA(7)

600nA(4)

Operating temperature

-40...+150°C(2)

-40...+175°C(7)

-55...+150°C(9)

Case

PG-TO247-3(9)

TO3P(LH)(1)

TO3P(N)(3)

TO3P(N)IS(2)

TO220NIS(1)

TO220SIS(2)

Kind of package

Bulk(18)

Price

-