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• P-Channel MOSFETs(x)
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Categories

Bipolar(1)

IGBT(18)

IGBT transistors(18)

Multichannel transistors(2)

N-Channel MOSFETs(53)

P-Channel MOSFETs(14)

Single bipolar transistors(1)

SMD N channel transistors(5)

THT N channel transistors(48)

THT P channel transistors(14)

Unipolar(69)

Manufacturer

INFINEON TECHNOLOGIES(12)

VISHAY(4)

Type of transistor

N/P-MOSFET(2)

P-MOSFET (14)

Mounting

SMD(3)

THT(13)

Technology

HEXFET®(12)

Power dissipation (W)

1.4W(1)

2W(1)

45W(1)

68W(1)

74W(1)

79W(2)

110W(2)

125W(1)

140W(1)

180W(1)

200W(3)

280W(1)

Gate charge

12.7nC(1)

22/23nC(1)

23.3nC(1)

25nC(1)

29nC(1)

38.7nC(1)

42nC(1)

44nC(2)

61nC(1)

64.7nC(2)

66nC(1)

120nC(3)

Gate-source voltage (V)

±20V(16)

On-state resistance

0.1Ω(1)

0.2Ω(1)

0.5Ω(2)

0.8Ω(1)

0.29Ω(2)

0.117Ω(2)

0.175Ω(1)

20mΩ(2)

29mΩ/58mΩ(1)

50mΩ/100mΩ(1)

60mΩ(2)

Drain-source voltage (V)

-55V(5)

-100V(5)

-150V(1)

-200V(3)

30/-30V(2)

Drain current (A)

-4A(1)

-6.8A(1)

-7.5A(1)

-12A(1)

-13A(1)

-14A(1)

-15A(1)

-19A(1)

-23A(2)

-31A(1)

-40A(1)

-74A(2)

4/-3A(1)

6,5/-4,9A(1)

Turn-on time

6.8ns/11ns(N/P)(1)

8.1ns/13ns(N/P)(1)

12ns(1)

13ns(2)

14ns(4)

15ns(3)

16ns(1)

17ns(1)

18ns(2)

Rise Time

8.9ns/13ns(N/P)(1)

21ns/17ns(N/P)(1)

27ns(1)

36ns(1)

43ns(2)

55ns(2)

58ns(1)

66ns(1)

67ns(2)

73ns(1)

86ns(1)

99ns(2)

Turn-off time

22ns/25ns(N/P)(1)

23ns(1)

26ns/34ns(N/P)(1)

28ns(1)

30ns(1)

34ns(1)

39ns(3)

45ns(1)

51ns(2)

53ns(1)

61ns(2)

79ns(1)

Fall Time

7.7ns/18ns(N/P)(1)

17ns/32ns(N/P)(1)

24ns(1)

37ns(2)

38ns(2)

41ns(1)

46ns(1)

51ns(2)

57ns(1)

63ns(1)

81ns(1)

96ns(2)

Kind of channel

Enhanced(16)

Case

D2PAK(1)

SO8(2)

TO220AB(10)

TO247AC(3)

Kind of package

Bulk(16)

Price

-